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等离子体处理对HfO₂薄膜在355nm波长下激光诱导损伤特性的影响。

Influence of plasma treatment on laser-induced damage characters of HfO2 thin films at 355 nm.

作者信息

Zhang Dongping, Wang Congjuan, Fan Ping, Cai Xingmin, Zheng Zhuanghao, Shao Jianda, Fan Zhengxiu

机构信息

Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen, PR China.

出版信息

Opt Express. 2009 May 11;17(10):8246-52. doi: 10.1364/oe.17.008246.

Abstract

HfO(2) thin films were deposited by e-beam evaporation, and were post-treated with plasma under different flow rate ratios of argon to oxygen. By measuring the surface defect density, weak absorption, laser-induced damage threshold (LIDT) and damage morphology, the influence of the flow rate ratio of argon to oxygen on the laser-induced damage characters of HfO(2) thin films were analyzed. The experimental results show that plasma treatment is effective in reducing the surface defect density of thin films. Compared with the as-grown sample, the absorption reduction is obvious after plasma treatment when argon and oxygen flow rate ratio is 5:25, but the absorption increases gradually with the continued increase of argon and oxygen flow rate ratio. LIDT measurements in 1-on-1 mode demonstrate that plasma treatment is not effective in improving LIDT of the samples at 355 nm. Damage morphologies reveal that the LIDT is dominated by nanoscale absorbing defects in subsurface layers, which agrees well with our numerical simulation result based on a spherical absorber model.

摘要

通过电子束蒸发沉积HfO₂薄膜,并在氩气与氧气的不同流量比下对其进行等离子体后处理。通过测量表面缺陷密度、弱吸收、激光诱导损伤阈值(LIDT)和损伤形貌,分析了氩气与氧气的流量比对HfO₂薄膜激光诱导损伤特性的影响。实验结果表明,等离子体处理可有效降低薄膜的表面缺陷密度。与生长态样品相比,当氩气和氧气流量比为5:25时,等离子体处理后吸收明显降低,但随着氩气和氧气流量比的持续增加,吸收逐渐增加。1对1模式下的LIDT测量表明,等离子体处理对提高样品在355nm处的LIDT无效。损伤形貌表明,LIDT由亚表层的纳米级吸收缺陷主导,这与我们基于球形吸收体模型的数值模拟结果吻合良好。

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