Wei Yaowei, Pan Feng, Zhang Qinghua, Ma Ping
Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.
Nanoscale Res Lett. 2015 Feb 6;10:44. doi: 10.1186/s11671-015-0731-8. eCollection 2015.
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.
先前关于通过原子层沉积（ALD）制备的薄膜的抗激光损伤性能的研究很少。在这项工作中，使用不同的工艺参数，如各种前驱体类型和脉冲持续时间，对用于生成薄膜的ALD工艺进行了研究。测量了激光诱导损伤阈值（LIDT），将其作为用作激光系统组件的薄膜的关键性能。还研究了薄膜受损的原因。通过改进工艺参数沉积的薄膜的LIDT达到了比先前测量更高的水平。具体而言，Al2O3薄膜的LIDT达到40 J/cm²。HfO2/Al2O3减反射膜的LIDT达到18 J/cm²，这是ALD单层膜和减反射膜报道的最高值。此外，结果表明通过进一步改变工艺参数可以提高LIDT。所有结果表明，ALD是一种用于制造高功率激光系统薄膜组件的有效薄膜沉积技术。
