Torimoto Tsukasa, Hashitani Masayuki, Konishi Takahito, Okazaki Ken-ichi, Shibayama Tamaki, Ohtani Bunsho
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
J Nanosci Nanotechnol. 2009 Jan;9(1):506-13. doi: 10.1166/jnn.2009.j010.
The surface of cadmium sulfide nanorods was modified by 3-mercaptopropyltrimethoxysilane, followed by the hydrolysis of trimethoxysilyl groups to form a silica shell structure (SiO2/CdS[rod]). Size-selective photoetching was applied to SiO2/CdS[rod] to modify the size of the CdS rod core. The absorption spectra were blue-shifted by irradiation of monochromatic light, and finally absorption onset agreed with the wavelength of irradiation light. These facts indicated that CdS rod particles were photoetched to smaller ones until the irradiated photons were no longer absorbed by the photoetched particles and that the SiO2 shell layer surrounding the CdS rod core prevented coalescence between photoetched particles. Changes in the wavelength of irradiation light from 488 to 436 nm caused a decrease in rod width from 3.5 to 2.3 nm along with remarkable decrease in the length of rod from 14 to 4.2 nm, suggesting that the photoetching rate was dependent on the kind of crystal faces and that the photocorrosion reactions at the tips of the CdS rod, that is, on (001) and/or (001) faces, were faster than those on other faces that appeared on the sides of the rod. This technique enabled control of CdS rod shape by selecting the wavelength of irradiation light.
硫化镉纳米棒的表面用3-巯基丙基三甲氧基硅烷进行了改性,随后三甲氧基硅烷基发生水解,形成了二氧化硅壳层结构(SiO₂/CdS[棒])。对SiO₂/CdS[棒]进行尺寸选择性光蚀刻,以改变CdS棒状核心的尺寸。通过单色光照射,吸收光谱发生蓝移,最终吸收起始点与照射光的波长一致。这些事实表明,CdS棒状颗粒被光蚀刻成更小的颗粒,直到被光蚀刻的颗粒不再吸收照射的光子,并且围绕CdS棒状核心的SiO₂壳层阻止了光蚀刻颗粒之间的聚结。将照射光的波长从488 nm变为436 nm,导致棒的宽度从3.5 nm减小到2.3 nm,同时棒的长度从14 nm显著减小到4.2 nm,这表明光蚀刻速率取决于晶面种类,并且CdS棒尖端(即(001)和/或(001)面)的光腐蚀反应比棒侧面出现的其他面的光腐蚀反应更快。该技术通过选择照射光的波长实现了对CdS棒形状的控制。