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硒化镉纳米粒子发光颜色的光化学微调:构建单源多色发光体。

Photochemical fine-tuning of luminescent color of cadmium selenide nanoparticles: fabricating a single-source multicolor luminophore.

作者信息

Torimoto Tsukasa, Murakami Shin-ya, Sakuraoka Miwa, Iwasaki Kentaro, Okazaki Ken-ichi, Shibayama Tamaki, Ohtani Bunsho

出版信息

J Phys Chem B. 2006 Jul 13;110(27):13314-8. doi: 10.1021/jp062645c.

Abstract

Size-selective photoetching was applied to silica-coated cadmium selenide (SiO2/CdSe) nanoparticles to precisely control their photoluminescence properties. The absorption spectra of CdSe was blue-shifted by irradiation of monochromatic light, and finally, the absorption onset agreed with the wavelength of irradiation light, indicating that CdSe particles were photoetched to smaller ones until the irradiated photons were not absorbed by the photoetched particles and that the SiO2 shell layer surrounding the CdSe core prevented coalescence between the photoetched particles. Although as-prepared SiO2/CdSe did not exhibit photoluminescence, the application of size-selective photoetching to SiO2/CdSe resulted in the development of the band gap emission, with the degree being enhanced with progress of the photoetching. The peak wavelength of photoluminescence decreased with a decrease in the wavelength used for the photoetching, so that the luminescence color could be tuned between red and blue. Partial photoetching of SiO2/CdSe nanoparticle films produced intense band gap emission of CdSe at the photoetched area, while the remainder of the SiO2/CdSe films did not exhibit detectable photoluminescence, resulting in the formation of a clear photoluminescence image under UV irradiation. This technique makes it possible to produce a multicolored photoluminescence image by irradiation with monochromatic lights having various wavelengths using a single source material.

摘要

尺寸选择性光蚀刻被应用于二氧化硅包覆的硒化镉(SiO₂/CdSe)纳米颗粒,以精确控制其光致发光特性。通过单色光照射,CdSe的吸收光谱发生蓝移,最终吸收起始点与照射光的波长一致,这表明CdSe颗粒被光蚀刻成更小的颗粒,直到照射的光子不再被光蚀刻后的颗粒吸收,并且围绕CdSe核的SiO₂壳层防止了光蚀刻颗粒之间的聚结。尽管制备的SiO₂/CdSe不表现出光致发光,但对SiO₂/CdSe应用尺寸选择性光蚀刻导致带隙发射的产生,且随着光蚀刻的进行,发射程度增强。光致发光的峰值波长随着用于光蚀刻的波长的减小而降低,从而发光颜色可以在红色和蓝色之间调节。SiO₂/CdSe纳米颗粒薄膜的部分光蚀刻在光蚀刻区域产生了强烈的CdSe带隙发射,而SiO₂/CdSe薄膜的其余部分未表现出可检测到的光致发光,从而在紫外光照射下形成清晰的光致发光图像。该技术使得使用单一源材料通过用具有各种波长的单色光照射来产生多色光致发光图像成为可能。

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