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通过硫化镉光蚀刻和金沉积获得的硫化镉(核)-二氧化硅(壳)纳米结构具有优异的光致发光和光催化活性。

Superior photoluminescence and photocatalytic activity of CdS (core)-SiO2 (shell) nanostructures obtained by CdS photoetching and Au deposition.

作者信息

Gupta Nidhi, Pal Bonamali

机构信息

School of Chemistry and Biochemistry, Thapar University, Patiala 147004, Punjab, India.

出版信息

J Nanosci Nanotechnol. 2013 Jul;13(7):5069-79. doi: 10.1166/jnn.2013.7601.

Abstract

Core-shell morphology of silica (SiO2) coated CdS nanocomposites (SiO2@CdS) of different shapes have been made for better stability, luminescence and photochemical activity of CdS nanoparticles. A thin layer (thickness 1-1.4 nm) of SiO2 shell is deposited over CdS nanorods (CdS-NR) of aspect ratio = 21 and CdS nanospheres (CdS-NS) of size 6-8 nm by alkyl silane agents. Synthesized nanostructures were characterized by diffuse reflectance spectra, HR-TEM, BET surface measurement, LB surface film, and absorption and photoluminescence analysis. Photoetching (PE) of CdS core led to blue shift of the absorbance onset of SiO2@CdS-NR along with the appearance of an exciton band at 485 nm due to the quantum confinement effect. Photodissolution of CdS core shifts the band gap energy from initial 2.4 to 2.6 eV for CdS-NR and 2.5 to 2.67 eV for CdS-NS. TEM images reveal the increase in aspect ratio of NR from 21 to 31 and decrease in the spherical core to 2.5 nm from 6-8 nm after PE. Photoetched SiO2@CdS-NC displayed highly intense fluorescence emission (SiO2@CdS-NS > SiO2@CdS-NR) than unetched SiO2@CdS-NC at 488 nm corresponding to band edge position. The Au (0.5 wt.%) deposition onto photoetched SiO2@CdS-NR(PE) composites highly enhanced the fluorescence intensity in comparison to 1 wt.% of Au and Ag loading. SiO2@CdS-NC(PE) displayed improved photocatalytic activity during benzaldehyde photooxidation under UV (125 W, Hg-arc, 10.4 mW/cm2) irradiation. Silica coating onto CdS particles improves the photostability and photoactivity of CdS upon long UV irradiation.

摘要

为了提高硫化镉(CdS)纳米颗粒的稳定性、发光性能和光化学活性,制备了不同形状的二氧化硅(SiO₂)包覆硫化镉纳米复合材料(SiO₂@CdS)的核壳结构。通过烷基硅烷试剂在长径比为21的CdS纳米棒(CdS-NR)和尺寸为6-8nm的CdS纳米球(CdS-NS)上沉积一层薄的SiO₂壳层(厚度为1-1.4nm)。通过漫反射光谱、高分辨率透射电子显微镜(HR-TEM)、BET表面测量、LB表面膜以及吸收和光致发光分析对合成的纳米结构进行了表征。CdS核的光蚀刻(PE)导致SiO₂@CdS-NR的吸光度起始点发生蓝移,同时由于量子限制效应在485nm处出现激子带。CdS核的光溶解使CdS-NR的带隙能量从初始的2.4eV变为2.6eV,使CdS-NS的带隙能量从2.5eV变为2.67eV。透射电子显微镜图像显示,光蚀刻后,纳米棒的长径比从21增加到31,球形核从6-8nm减小到2.5nm。在488nm对应带边位置,光蚀刻的SiO₂@CdS-NC比未蚀刻的SiO₂@CdS-NC表现出更强的荧光发射(SiO₂@CdS-NS > SiO₂@CdS-NR)。与1wt.%的金和银负载相比,在光蚀刻的SiO₂@CdS-NR(PE)复合材料上沉积0.5wt.%的金极大地增强了荧光强度。在紫外光(125W,汞弧灯,10.4mW/cm²)照射下,SiO₂@CdS-NC(PE)在苯甲醛光氧化过程中表现出改善的光催化活性。在长时间紫外照射下,在CdS颗粒上包覆二氧化硅可提高CdS的光稳定性和光活性。

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