Yeom Donghyuk, Kang Jeongmin, Yoon Changjoon, Park Byoungjun, Jeong Dong-Young, Koh Eui Kwan, Kim Sangsig
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.
J Nanosci Nanotechnol. 2009 May;9(5):3256-60. doi: 10.1166/jnn.2009.020.
The memory characteristics of top-gate single ZnO nanowire-based field-effect transistors (FETs) with floating gate nodes consisting of Au nanoparticles on top of the nanowire channels were investigated in this study. Au nanoparticles, synthesized by a thermal deposition of Au thin film and by a subsequent thermal annealing procedure, were embedded in between Al2O3 tunneling and control gate layers deposited on ZnO nanowire channels. For a representative single ZnO nanowire-based FET with floating gate nodes consisting of Au nanoparticles embedded between Al2O3 layers, its drain current versus gate voltage (I(DS)-V(DS)) characteristics for a double sweep in the gate voltage range from -4 to 4 V exhibit a clockwise hysteresis loop with a threshold voltage shift of deltaV(th) = 1.6 V, resulting from the tunneling of the charge carriers from the ZnO nanowire channel into the Au nanoparticles. In addition, the charge storage characteristic of threshold voltage shift with the elapsed time observed in this FET is also discussed in this paper.
本研究对基于顶部栅极单根氧化锌纳米线的场效应晶体管（FET）的记忆特性进行了研究，该晶体管的浮栅节点由纳米线通道顶部的金纳米颗粒组成。通过热沉积金薄膜并随后进行热退火程序合成的金纳米颗粒，被嵌入到沉积在氧化锌纳米线通道上的氧化铝隧穿层和控制栅层之间。对于一个具有代表性的基于单根氧化锌纳米线的FET，其浮栅节点由嵌入氧化铝层之间的金纳米颗粒组成，在栅极电压范围从-4到4 V的双扫描过程中，其漏极电流与栅极电压（I(DS)-V(DS)）特性呈现出顺时针滞后回线，阈值电压偏移量为deltaV(th)=1.6 V，这是由于电荷载流子从氧化锌纳米线通道隧穿到金纳米颗粒中所致。此外，本文还讨论了在该FET中观察到的阈值电压随时间变化的电荷存储特性。
