Yeom Donghyuk, Kang Jeongmin, Lee Myoungwon, Jang Jaewon, Yun Junggwon, Jeong Dong-Young, Yoon Changjoon, Koo Jamin, Kim Sangsig
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.
Nanotechnology. 2008 Oct 1;19(39):395204. doi: 10.1088/0957-4484/19/39/395204. Epub 2008 Aug 8.
The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.
在这项工作中，研究了以铂纳米晶体作为浮栅节点的基于氧化锌纳米线的纳米浮栅存储器（NFGM）的存储特性。铂纳米晶体嵌入在沉积于氧化锌纳米线沟道上的氧化铝隧穿层和控制氧化层之间。对于一个具有代表性的嵌入铂纳米晶体的基于氧化锌纳米线的NFGM，在其漏极电流与栅极电压（I(DS)-V(GS)）测量中，对栅极电压进行双扫描时观察到阈值电压偏移为3.8 V，这表明纳米晶体中形成的深有效势阱为我们的NFGM提供了大的电荷存储容量。本文讨论了在该存储器件中观察到的电荷存储效应的细节。
