光反应性化学吸附单层抑制热纳米压印光刻中的聚合物去湿
Photoreactive chemisorbed monolayer suppressing polymer dewetting in thermal nanoimprint lithography.
作者信息
Oda Hirokazu, Ohtake Tomoyuki, Takaoka Toshiaki, Nakagawa Masaru
机构信息
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan.
出版信息
Langmuir. 2009 Jun 16;25(12):6604-6. doi: 10.1021/la900902f.
We describe reactive-monolayer-assisted thermal nanoimprint lithography. The reactive monolayer inducing the graft reaction with thermoplastic poly(styrene) by ultraviolet light exposure was formed from 4-((10-mercaptodecyl)oxy)benzophenone on a gold thin film. The photochemical graft reaction suppressed the thermally induced dewetting of a poly(styrene) thin film on the modified gold surface. As a result, the poly(styrene) thin film used as a resist layer for wet etching could be patterned by thermal nanoimprint lithography, and 100-nm-scale patterns of a gold thin film could be prepared simply by wet etching.
我们描述了反应性单层辅助热纳米压印光刻技术。通过紫外线照射引发与热塑性聚（苯乙烯）发生接枝反应的反应性单层由4-（（10-巯基癸基）氧基）二苯甲酮在金薄膜上形成。光化学接枝反应抑制了改性金表面上聚（苯乙烯）薄膜的热致去湿现象。结果，用作湿法蚀刻抗蚀剂层的聚（苯乙烯）薄膜可以通过热纳米压印光刻进行图案化，并且仅通过湿法蚀刻就可以制备100纳米尺度的金薄膜图案。
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