Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba, Sendai, Japan.
Langmuir. 2012 Aug 7;28(31):11646-53. doi: 10.1021/la301632y. Epub 2012 Jul 23.
We describe the selective electrodeposition of submicrometer gold (Au) patterns achieved by a thin film resist layer of polystyrene (PS) that was exposed to ultraviolet (UV) light on a photoreactive monolayer of a benzophenone-containing alkylthiol formed on a Au-plated substrate and patterned by thermal nanoimprint lithography. The presence of a PS graft layer caused by the benzophenone monolayer photochemistry at an interface between the PS resist layer and photoreactive monolayer played the important role of suppressing the unfavorable growth of tiny Au grains in regions masked with the PS resist layer, resulting in the selective Au electrodeposition in aperture regions of PS resist patterns. The suppressive effect on selective Au electrodeposition depended on the molecular weight of PS used as a resist material. Among unimodal PSs having weight-average molecular weights (M(w)'s) of 2100, 10,900, and 106,000 g mol(-1), the PS of M(w) = 10,900 g mol(-1) functioned most effectively as the resist layer. Au electrodeposition at a low current density allowed the preparation of Au lines having widths of submicrometers and a uniform height independent of line widths in resist aperture regions. Submicrometer bump structures of Au lines could be fabricated on transparent silica substrates by the subsequent wet etching of a Au electrode layer and then a chromium adhesive layer.
我们描述了通过在金电镀基底上形成的含有苯并二酮的烷基硫醇的光反应单层上曝光于紫外光的聚苯乙烯(PS)的薄膜抗蚀剂层选择性地电沉积亚微米金(Au)图案。在 PS 抗蚀剂层和光反应单层之间的界面处,苯并二酮单层光化学反应引起 PS 接枝层的存在起到了抑制具有 PS 抗蚀剂层的掩蔽区域中的微小 Au 颗粒的不利生长的重要作用,导致在 PS 抗蚀剂图案的孔径区域中选择性地电沉积 Au。对选择性 Au 电沉积的抑制作用取决于用作抗蚀剂材料的 PS 的分子量。在重均分子量(Mw)为 2100、10900 和 106000gmol-1 的单峰 PS 中,Mw=10900gmol-1 的 PS 作为抗蚀剂层最有效地发挥作用。在低电流密度下进行 Au 电沉积,可以制备具有亚微米宽度且在抗蚀剂孔径区域中独立于线宽的均匀高度的 Au 线。通过随后湿蚀刻 Au 电极层和铬粘着层,可以在透明二氧化硅基底上制造 Au 线条的亚微米凸块结构。