Claps Ricardo, Raghunathan V, Dimitropoulos D, Jalali B
Opt Express. 2004 Jun 14;12(12):2774-80. doi: 10.1364/opex.12.002774.
We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.
我们对硅拉曼放大器中TPA诱导的自由载流子吸收效应进行建模，并量化可获得净增益的条件。可实现的拉曼增益强烈依赖于自由载流子寿命、传播损耗以及通过泵浦诱导展宽的有效拉曼增益系数。
