Liu Y, Tsang H K
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China.
Opt Lett. 2006 Jun 1;31(11):1714-6. doi: 10.1364/ol.31.001714.
We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
我们研究了氦离子注入是否能够降低载流子寿命，从而降低双光子吸收产生的自由载流子密度。我们的实验和理论模型表明，将氦离子注入硅波导能够成功降低自由载流子损耗，并通过连续波泵浦受激拉曼散射实现净增益，而无需反向偏置来去除光生自由载流子。
