Henry M D, Walavalkar S, Homyk A, Scherer A
Applied Physics Department, California Institute of Technology, Pasadena, CA 91125, USA.
Nanotechnology. 2009 Jun 24;20(25):255305. doi: 10.1088/0957-4484/20/25/255305. Epub 2009 Jun 2.
We introduce using sputtered aluminum oxide (alumina) as a resilient etch mask for fluorinated silicon reactive ion etches. Achieving selectivity of 5000:1 for cryogenic silicon etching and 68:1 for SF(6)/C(4)F(8) silicon etching, we employ this mask for fabrication of high-aspect-ratio silicon micropillars and nanopillars. Nanopillars with diameters ranging from below 50 nm up to several hundred nanometers are etched to heights greater than 2 microm. Micropillars of 5, 10, 20, and 50 microm diameters are etched to heights of over 150 microm with aspect ratios greater than 25. Processing and characterization of the sputtered alumina is also discussed.
我们介绍了使用溅射氧化铝作为用于氟化硅反应离子刻蚀的弹性蚀刻掩膜。对于低温硅蚀刻实现了5000:1的选择性，对于SF(6)/C(4)F(8)硅蚀刻实现了68:1的选择性，我们使用这种掩膜来制造高纵横比的硅微柱和纳米柱。直径范围从低于50纳米到几百纳米的纳米柱被蚀刻到超过2微米的高度。直径为5、10、20和50微米的微柱被蚀刻到超过150微米的高度，纵横比大于25。还讨论了溅射氧化铝的加工和表征。
