Xing Jie, Guo Erjia, Jin Kui-Juan, Lu Huibin, Wen Juan, Yang Guozhen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Opt Lett. 2009 Jun 1;34(11):1675-7. doi: 10.1364/ol.34.001675.
Solar-blind deep-ultraviolet (DUV) photoconductive detectors based on an LaAlO(3) (LAO) single crystal with interdigitated electrodes are reported. The LAO detectors show a high sensitivity to DUV light with wavelengths less than 210 nm, and the DUV/UV (200 versus 290 nm) contrast ratio is more than 2 orders of magnitude. The photocurrent responsivity of LAO detector reaches 71.8 mA/W at 200 nm at 10 V bias, and the corresponding quantum efficiency eta is 44.6%. The noise current under sunlight at midday outdoors is only 77 pA. The experimental results indicate that the LAO detectors have attractive potential applications in DUV detection.
报道了基于具有叉指电极的LaAlO(3)(LAO)单晶的日盲深紫外(DUV)光电导探测器。LAO探测器对波长小于210nm的DUV光表现出高灵敏度,并且DUV/UV(200对290nm)对比度超过2个数量级。LAO探测器在10V偏压下于200nm处的光电流响应率达到71.8mA/W,相应的量子效率η为44.6%。中午户外阳光下的噪声电流仅为77pA。实验结果表明,LAO探测器在DUV检测中具有诱人的潜在应用。