Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China.
ACS Nano. 2015 Feb 24;9(2):1561-70. doi: 10.1021/acsnano.5b00437. Epub 2015 Feb 2.
Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications in diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films are complicated and costly. Here we report a high-performance DUV photodetector based on graphene quantum dots (GQDs) fabricated via a facile solution process. The devices are capable of detecting DUV light with wavelength as short as 254 nm. With the aid of an asymmetric electrode structure, the device performance could be significantly improved. An on/off ratio of ∼6000 under 254 nm illumination at a relatively weak light intensity of 42 μW cm(-2) is achieved. The devices also exhibit excellent stability and reproducibility with a fast response speed. Given the solution-processing capability of the devices and extraordinary properties of GQDs, the use of GQDs will open up unique opportunities for future high-performance, low-cost DUV photodetectors.
由于在多个领域的潜在应用，人们对于响应速度快、灵敏度高且探测波长短于 320nm 的深紫外（DUV）光探测器有着强烈需求。然而，基于传统半导体薄膜的 DUV 探测器的制造工艺复杂且成本高昂。在此，我们通过简便的溶液处理方法报告了一种基于石墨烯量子点（GQDs）的高性能 DUV 光探测器。该器件可探测波长短至 254nm 的 DUV 光。借助非对称电极结构，可显著改善器件性能。在相对较弱的光强（42μWcm(-2)）下，254nm 光照时的开关比约为 6000。器件还具有出色的稳定性和重现性，响应速度很快。鉴于器件的溶液处理能力和 GQDs 的非凡性质，GQDs 的使用将为未来高性能、低成本 DUV 光探测器开辟独特的机会。
