Tang Pingsheng, Towner D, Hamano T, Meier A, Wessels B
Opt Express. 2004 Nov 29;12(24):5962-7. doi: 10.1364/opex.12.005962.
The high frequency operation of a low-voltage electrooptic modulator based on a strip-loaded BaTiO3 thin film waveguide structure has been demonstrated. The epitaxial BaTiO3 thin film on an MgO substrate forms a composite structure with a low effective dielectric constant of 20.8 at 40 GHz. A 3.9 V half-wave voltage with a 3.7 GHz 3-dB bandwidth and a 150 pm/V effective electrooptic coefficient is obtained for the 3.2mm-long modulator at 1.55 ?m. Broadband modulation up to 40 GHz is measured with a calibrated detection system. Numerical simulations indicate that the BaTiO3 thin film modulator has the potential for a 3-dB operational bandwidth in excess of 40 GHz through optimized design.
基于带状负载BaTiO₃薄膜波导结构的低压电光调制器的高频运行已得到证明。MgO衬底上的外延BaTiO₃薄膜形成了一种复合结构,在40GHz时有效介电常数低至20.8。对于1.55μm波长下3.2mm长的调制器,获得了3.9V的半波电压、3.7GHz的3dB带宽和150pm/V的有效电光系数。使用校准检测系统测量了高达40GHz的宽带调制。数值模拟表明,通过优化设计,BaTiO₃薄膜调制器具有超过40GHz的3dB工作带宽潜力。