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绝缘体上的单晶钛酸钡薄膜中的周期性畴反转

Periodic Domain Inversion in Single Crystal Barium Titanate-on-Insulator Thin Film.

作者信息

Aashna Pragati, Lin Hong-Lin, Cao Yu, Yin Yuhui, Gao Yuan, Mohanraj Sakthi Sanjeev, Zhu Di, Danner Aaron

机构信息

Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.

Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore.

出版信息

Adv Sci (Weinh). 2024 Nov;11(42):e2406248. doi: 10.1002/advs.202406248. Epub 2024 Sep 19.

Abstract

Experimentally achieving the first-ever electric field periodic poling of single crystal barium titanate oxide (BTO, or BaTiO) thin film on-insulator is reported. Owing to the outstanding optical nonlinearities of BTO, this result is a key step toward achieving quasi-phase-matching (QPM). First, the BTO thin film is grown on a dysprosium scandate substrate using pulsed laser deposition with a thin layer of strontium ruthenate later serving as the bottom electrode for poling. The characterization of the BTO thin film using x-ray diffraction (XRD) and piezo-response force microscopy to demonstrate single crystal, single domain growth of the film that enables the desired periodic poling, are presented. To investigate the poling quality, both non-destructive piezo force response microscopy and destructive etching-assisted scanning electron microscopy (SEM) are applied, and it is shown that high quality, uniform, and intransient poling with 50% duty cycle and periods ranging from 2 µm to 10 µm is achieved. The successful realization of periodic poling in BTO thin film unlocks the potential for highly efficient nonlinear processes under QPM that seemed far-fetched with prior polycrystalline BTO thin films which predominantly relied on efficiency-limited random or non-phase matching conditions and is a key step toward integration of BTO photonic devices.

摘要

报道了在绝缘体上通过实验首次实现单晶钛酸钡氧化物(BTO,即BaTiO₃)薄膜的电场周期性极化。由于BTO具有出色的光学非线性,这一结果是实现准相位匹配(QPM)的关键一步。首先,使用脉冲激光沉积法在钪酸镝衬底上生长BTO薄膜,随后用一层钌酸锶作为极化的底部电极。展示了使用X射线衍射(XRD)和压电响应力显微镜对BTO薄膜进行表征,以证明该薄膜的单晶、单畴生长,从而实现所需的周期性极化。为了研究极化质量,应用了非破坏性压电力响应显微镜和破坏性蚀刻辅助扫描电子显微镜(SEM),结果表明实现了高质量、均匀且稳定的极化,占空比为50%,周期范围为2微米至10微米。BTO薄膜中周期性极化的成功实现开启了在QPM条件下实现高效非线性过程的潜力,而这对于之前主要依赖效率受限的随机或非相位匹配条件的多晶BTO薄膜来说似乎遥不可及,并且是BTO光子器件集成的关键一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e83f/11558107/48cf71c8764a/ADVS-11-2406248-g001.jpg

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