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等离子体互连与传统互连:延迟、串扰和能源成本的比较

Plasmonic interconnects versus conventional interconnects: a comparison of latency, crosstalk and energy costs.

作者信息

Conway Josh A, Sahni Subal, Szkopek Thomas

机构信息

The Aerospace Corporation, 2350 E. El Segundo Blvd. El Segundo, CA 90245, USA.

出版信息

Opt Express. 2007 Apr 16;15(8):4474-84. doi: 10.1364/oe.15.004474.

Abstract

The continued scaling of integrated circuits will require advances in intra-chip interconnect technology to minimize delay, density of energy dissipation and cross-talk. We present the first quantitative comparison between the performance of metal wire interconnects, operated in the traditional manner by electric charge and discharge, versus the performance of metal wires operated as surface plasmon waveguides. Surface plasmon wire waveguides have the potential to reduce signal delay, but the high confinement required for low cross-talk amongst high density plasmon wire interconnects significantly increases energy dissipation per transmitted bit, above and beyond that required for electric charge/discharge interconnects at the same density.

摘要

集成电路的持续缩放将需要芯片内互连技术取得进展,以尽量减少延迟、能量耗散密度和串扰。我们首次对以传统方式通过电荷充放电操作的金属线互连性能与作为表面等离子体波导操作的金属线性能进行了定量比较。表面等离子体线波导有潜力降低信号延迟,但在高密度等离子体线互连中实现低串扰所需的高度限制显著增加了每传输比特的能量耗散,超过了相同密度下电荷/放电互连所需的能量耗散。

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