Vajpeyi A P, Ajagunna A O, Tsagaraki K, Androulidaki M, Georgakilas A
Microelectronics Research Group, Department of Physics, University of Crete, PO Box 2208, 71003, Greece.
Nanotechnology. 2009 Aug 12;20(32):325605. doi: 10.1088/0957-4484/20/32/325605. Epub 2009 Jul 21.
Single crystalline and single phase In(x)Ga(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology, structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high resolution x-ray diffraction (HR-XRD), and both room and low temperature photoluminescence spectra. The EDXA results showed that these nanopillars were composed of InGaN and the amount of indium incorporation in In(x)Ga(1-x)N NPs could be controlled by changing the growth temperature. The room temperature and low temperature PL spectra revealed that the emission wavelength could be tuned from a blue to green luminescent region depending on the growth temperature. The wavelength tuning was attributed to a higher amount of In incorporation at a lower growth temperature which was consistent with the EDXA and HR-XRD results.
通过等离子体辅助分子束外延在（111）硅衬底上自发生长出单晶且单相的In(x)Ga(1 - x)N纳米柱。使用扫描电子显微镜（SEM）、能量色散X射线（EDXA）分析、高分辨率X射线衍射（HR - XRD）以及室温与低温光致发光光谱对InGaN纳米柱的表面形貌、结构质量和光电特性进行了分析。EDXA结果表明这些纳米柱由InGaN组成，并且通过改变生长温度可以控制In(x)Ga(1 - x)N纳米颗粒中铟的掺入量。室温及低温PL光谱显示，根据生长温度，发射波长可从蓝光发光区域调谐至绿光发光区域。波长调谐归因于在较低生长温度下有更高的铟掺入量，这与EDXA和HR - XRD结果一致。
