Zaumseil Jana, Ho Xinning, Guest Jeffrey R, Wiederrecht Gary P, Rogers John A
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
ACS Nano. 2009 Aug 25;3(8):2225-34. doi: 10.1021/nn9005736.
We demonstrate near-infrared electroluminescence from ambipolar, electrolyte-gated arrays of highly aligned single-walled carbon nanotubes (SWNT). Using electrolytes instead of traditional oxide dielectrics in carbon nanotube field-effect transistors (FET) facilitates injection and accumulation of high densities of holes and electrons at very low gate voltages with minimal current hysteresis. We observe numerous emission spots, each corresponding to individual nanotubes in the array. The positions of these spots indicate the meeting point of the electron and hole accumulation zones determined by the applied gate and source-drain voltages. The movement of emission spots with gate voltage yields information about relative band gaps, contact resistance, defects, and interaction between carbon nanotubes within the array. Introducing thin layers of HfO(2) and TiO(2) provides a means to modify exciton screening without fundamentally changing the current-voltage characteristics or electroluminescence yield of these devices.
我们展示了来自高度对齐的单壁碳纳米管（SWNT）的双极性电解质门控阵列的近红外电致发光。在碳纳米管场效应晶体管（FET）中使用电解质而非传统的氧化物电介质，有助于在非常低的栅极电压下以最小的电流滞后注入和积累高密度的空穴和电子。我们观察到许多发射点，每个发射点对应于阵列中的单个纳米管。这些点的位置表明了由施加的栅极和源漏电压所确定的电子和空穴积累区的交汇点。发射点随栅极电压的移动产生了有关相对带隙、接触电阻、缺陷以及阵列内碳纳米管之间相互作用的信息。引入HfO(2)和TiO(2)薄层提供了一种在不根本改变这些器件的电流 - 电压特性或电致发光产率的情况下修改激子屏蔽的方法。
