State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Box 98, Beijing 100029, China.
Langmuir. 2010 Jan 5;26(1):179-82. doi: 10.1021/la901981y.
The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k < 3.0), meeting the development of ultra-large-scale integration (ULSI) circuits. The hydrophobicity feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.
采用原位结晶技术在铜基底上制备出了具有六方晶型且结晶方向垂直于基底的苯基亚磷酸锆（ZrPP）薄膜。其表面具有微纳粗糙结构以及表面功能基团的固有疏水性，使 ZrPP 薄膜具有超疏水性能，水接触角（CA）在 134 度到 151 度之间，无需进行低表面能修饰。特别是在腐蚀性溶液中，如酸性或碱性溶液，pH 值范围从 2 到 12，所有 ZrPP 薄膜的 CA 都没有明显波动。具有疏水性的 ZrPP 薄膜的 k 值处于低 k 值范围（k < 3.0），满足超大规模集成电路（ULSI）的发展需求。疏水性的特点使得 ZrPP 薄膜在环境气氛中具有更稳定的低 k 值。此外，ZrPP 薄膜的极化电流比未经处理的铜基底降低了 2 个数量级。即使在室温下真空干燥 30 天，ZrPP 薄膜也表现出优异的耐腐蚀性，表明其具有稳定的防腐性能。
