Castro Neto A H, Guinea F
Department of Physics, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA.
Phys Rev Lett. 2009 Jul 10;103(2):026804. doi: 10.1103/PhysRevLett.103.026804.
We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the sp3 distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in diamond and other zinc-blende semiconductors. The spin-flip scattering produced by the impurity leads to spin scattering lengths of the order found in recent experiments. Our results indicate that the spin-orbit coupling can be controlled via the impurity coverage.
我们研究了杂质在石墨烯中诱导自旋轨道耦合的效应。我们表明，杂质引起的sp3畸变会导致自旋轨道耦合大幅增加，其值与在金刚石和其他闪锌矿半导体中发现的值相当。杂质产生的自旋翻转散射导致了近期实验中所发现的量级的自旋散射长度。我们的结果表明，自旋轨道耦合可以通过杂质覆盖率来控制。
