Fedorov Dmitry V, Gradhand Martin, Ostanin Sergey, Maznichenko Igor V, Ernst Arthur, Fabian Jaroslav, Mertig Ingrid
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany and Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany.
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany and H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom.
Phys Rev Lett. 2013 Apr 12;110(15):156602. doi: 10.1103/PhysRevLett.110.156602.
The effect of electron-impurity scattering on momentum and spin relaxation times in graphene is studied by means of relativistic ab initio calculations. Assuming carbon and silicon adatoms as natural impurities in graphene, we are able to simulate fast spin relaxation observed experimentally. We investigate the dependence of the relaxation times on the impurity position and demonstrate that C or Si adatoms act as real-space spin hot spots inducing spin-flip rates about 5 orders of magnitude larger than those of in-plane impurities. This fact confirms the hypothesis that the adatom-induced spin-orbit coupling leads to fast spin relaxation in graphene.
通过相对论性第一性原理计算研究了电子-杂质散射对石墨烯中动量和自旋弛豫时间的影响。假设碳和硅吸附原子为石墨烯中的天然杂质，我们能够模拟实验中观察到的快速自旋弛豫。我们研究了弛豫时间对杂质位置的依赖性，并证明碳或硅吸附原子作为实空间自旋热点，其诱导的自旋翻转速率比面内杂质大5个数量级左右。这一事实证实了吸附原子诱导的自旋-轨道耦合导致石墨烯中快速自旋弛豫的假设。
