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低填充率下宽量子阱中电子的关联态:电荷分布对称性的作用

Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry.

作者信息

Shabani J, Gokmen T, Shayegan M

机构信息

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.

出版信息

Phys Rev Lett. 2009 Jul 24;103(4):046805. doi: 10.1103/PhysRevLett.103.046805. Epub 2009 Jul 22.

Abstract

Magnetotransport measurements on electrons confined to a 57-nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings (nu) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of 1.93 x 10;{11} cm;{-2}, a developing fractional quantum Hall state is observed at the even-denominator filling nu = 1/4 when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the nu = 1/5 fractional quantum Hall state.

摘要

对限制在57纳米宽的砷化镓量子阱中的电子进行的磁输运测量表明,在低朗道能级填充数(ν)时的关联电子态对电子电荷分布的对称性表现出显著的依赖性。在密度为1.93×10¹¹厘米⁻²时,当分布对称时,在偶数分母填充数ν = 1/4处观察到一个正在形成的分数量子霍尔态,但当分布变得不对称时,它会迅速消失。在较低密度下,当我们使电荷分布不对称时,我们观察到围绕ν = 1/5分数量子霍尔态的绝缘相迅速增强。

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