The role of interface thermal boundary resistance in the overall thermal conductivity of Si-Ge multilayered structures.

Nanoscale engineered materials with tailored thermal properties are desirable for applications such as highly efficient thermoelectric, microelectronic and optoelectronic devices. It has been shown earlier that by judiciously varying the interface thermal boundary resistance (TBR), thermal conductivity in nanostructures can be controlled. In the presented investigation, the role of TBR in controlling thermal conductivity at the nanoscale is analyzed by performing non-equilibrium molecular dynamics (NEMD) simulations to calculate thermal conductivity of a range of Si-Ge multilayered structures with 1-3 periods, and with four different layer thicknesses. The analyses are performed at three different temperatures (400, 600 and 800 K). As expected, the thermal conductivity of all layered structures increases with the increase in the number of periods as well as with the increase in the monolayer thickness. Invariably, we find that the TBR offered by the interface nearest to the hot reservoir is the highest. This effect is in contrast to the usual notion that each interface contributes equally to the heat transfer resistance in a layered structure. Findings also suggest that for high period structures the average TBR offered by the interfaces is not equal. Findings are used to derive an analytical expression that describes period-length-dependent thermal conductivity of multilayered structures.