Department of Civil and Environment Engineering and Department of Mechanical Engineering and Materials Science, University of Pittsburgh, PA 15260, USA.
Nanotechnology. 2010 Apr 16;21(15):155704. doi: 10.1088/0957-4484/21/15/155704. Epub 2010 Mar 23.
Anomalous heat conduction behavior is observed for the first time using non-equilibrium molecular dynamics (NEMD) simulations to obtain the thermal conductivity of thin finite-size silicon nanowires (NWs) in the 001 lattice direction. In the series of simulations, the length dependence of thermal conductivity of thin silicon nanowires (NWs) ranging from 6 to 434 nm is analyzed. It is found that a transition occurs in the thermal conductivity versus length curve after the initial convergence trend appears near the mean free path of bulk silicon. Because no experimental measurements of thermal conductivity are available for sub-10 nm diameter silicon NWs, different NEMD methods are used to test and analyze this anomalous thermal behavior of thin Si NWs with different boundary conditions. The underlying mechanism of the observed behavior is inferred from MD simulations with different boundary conditions so that the anomalous behavior is mainly caused by border restriction and boundary scattering of the thin silicon NWs.
首次使用非平衡分子动力学(NEMD)模拟观察到异常热传导行为,以获得 001 晶格方向的有限尺寸硅纳米线(NW)的热导率。在一系列模拟中,分析了长度在 6 至 434nm 范围内的薄硅纳米线(NW)的热导率的依赖性。发现在初始收敛趋势出现在体硅的平均自由程附近之后,热导率与长度的关系曲线中发生了转变。由于对于直径小于 10nm 的硅 NW,没有热导率的实验测量值,因此使用不同的 NEMD 方法来测试和分析具有不同边界条件的薄 SiNW 的这种异常热行为。从具有不同边界条件的 MD 模拟中推断出观察到的行为的潜在机制,以便异常行为主要是由薄硅 NW 的边界限制和边界散射引起的。