He Xiao-Yong
School of Science, Henan University of Technology, China.
Opt Express. 2009 Aug 17;17(17):15359-71. doi: 10.1364/oe.17.015359.
The propagation properties of terahertz (THz) waves passing through heavily doped semiconductor slit have been numerically investigated by using the transfer matrix method. The effects of geometrical parameters, carrier concentration, and dielectric materials filling in the slit have been considered. The contour for carrier concentration and slit width show that as slit width and carrier concentration decreases, the effective indices increase and the propagation lengths decrease. For the case of water filling in the slit, temperature has more effect on the imaginary part of propagation constant than the real part. Most of the energy stored in the slit is in the form of electric energy, which firstly decreases and then increases with the decreasing of slit width. It is expected that the semiconductor slit structure is very useful for the practical applications of THz waves in the fields of biological specimen analysis and medical diagnosis.
利用转移矩阵法对太赫兹（THz）波通过重掺杂半导体狭缝的传播特性进行了数值研究。考虑了几何参数、载流子浓度以及狭缝中填充的介电材料的影响。载流子浓度和狭缝宽度的等值线表明，随着狭缝宽度和载流子浓度的减小，有效折射率增加而传播长度减小。对于狭缝中填充水的情况，温度对传播常数虚部的影响比对实部的影响更大。狭缝中存储的大部分能量以电能的形式存在，其随狭缝宽度的减小先减小后增加。预计半导体狭缝结构在太赫兹波在生物样本分析和医学诊断领域的实际应用中非常有用。
