Funk Stefan, Acuna Guillermo, Handloser Matthias, Kersting Roland
Photonics and Optoelectronics Group & Center for NanoScience,University of Munich, 80799 Munich, Germany.
Opt Express. 2009 Sep 28;17(20):17450-6. doi: 10.1364/OE.17.017450.
We report on the development of a terahertz time-domain technique for measuring the momentum relaxation time of charge carriers in ultrathin semiconductor layers. Making use of the Drude model, our phase sensitive modulation technique directly provides the relaxation time. Time-resolved THz experiments were performed on n-doped GaAs and show precise agreement with data obtained by electrical characterization. The technique is well suited for studying novel materials where parameters such as the charge carriers' effective mass or the carrier density are not known a priori.
我们报告了一种用于测量超薄半导体层中电荷载流子动量弛豫时间的太赫兹时域技术的发展情况。利用德鲁德模型，我们的相敏调制技术直接提供弛豫时间。对n型掺杂砷化镓进行了时间分辨太赫兹实验，结果与通过电学表征获得的数据精确吻合。该技术非常适合研究新型材料，在这些材料中，电荷载流子的有效质量或载流子密度等参数事先并不清楚。
