University of California, Berkeley, California 94720, USA.
Nano Lett. 2009 Nov;9(11):3676-82. doi: 10.1021/nl902186v.
We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.
我们报告了一个 100000 倍的增加,个别 CdSe 纳米棒的电导率时,他们通过直接溶液相生长的 Au 尖端接触纳米棒的两端。整体紫外 - 可见和 X 射线光电子能谱表明,这种增强不是由于合金的纳米棒。相反,低温隧道和高温(250-400 K)热电子发射通过结在 Au 接触揭示了 75%较低的界面势垒相比,对照样品的电导率。我们将这种势垒降低与电子结构的 Au-CdSe 界面。我们的研究结果强调了纳米晶体表面结构对稳健的器件性能的重要性和接触方法的优势。