Li Zhi-Yong, Xu Dan-Xia, McKinnon W Ross, Janz Siegfried, Schmid Jens H, Cheben Pavel, Yu Jin-Zhong
Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), 35A Tsinghua East Road, Beijing 100083, China.
Opt Express. 2009 Aug 31;17(18):15947-58. doi: 10.1364/OE.17.015947.
We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V x cm for a 3 V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0 V bias, due to free carrier absorption.
我们展示了一种基于周期性交错排列的PN结线性阵列中载流子耗尽效应的硅波导调制器的设计及数值模拟结果，这些PN结垂直于光传播方向排列。在这种结构中，光波导模式与耗尽区的重叠比使用平行于波导传播方向排列的单个PN结的设计要大得多。模拟结果预测，对于一个3V的偏置电压，优化后的调制器将具有0.56V·cm的高调制效率，3dB频率带宽超过40GHz。由于自由载流子吸收，该器件长度为1.86mm，在0V偏置电压下的最大固有损耗为4.3dB。
