基于低电压-长度积的薄膜铌酸锂的高性能马赫-曾德尔调制器

High-Performance Mach-Zehnder Modulator Based on Thin-Film Lithium Niobate with Low Voltage-Length Product.

作者信息

Li Ying, Lan Tian, Yang Dengcai, Bao Jianfeng, Xiang Meihua, Yang Feng, Wang Zhiyong

机构信息

Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China.

Key Laboratory of Trans-scale Laser Manufacturing Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China.

出版信息

ACS Omega. 2023 Mar 2;8(10):9644-9651. doi: 10.1021/acsomega.3c00310. eCollection 2023 Mar 14.

DOI:10.1021/acsomega.3c00310

PMID:36936308

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10018726/

Abstract

Electro-optic modulators (EOMs) based on a thin-film lithium niobate (TFLN) photonic integration platform play a crucial role in loading electrical signals onto optical signals. In this paper, we proposed on-chip EOMs operating at two commercially available wavelengths of 850 and 1550 nm and successfully demonstrated rather low voltage-length products ( s) of 0.78 V·cm and 1.29 V·cm, respectively. Additionally, the EOM working at 1550 nm exhibits the capability of 3-dB electro-optic (E-O) bandwidth beyond 40 GHz due to the limitation of our test conditions. This study is quite helpful for understanding EOM structures in a TFLN platform, as well as the fabrication of high-performance and multifunctional EOM devices.

摘要

基于薄膜铌酸锂（TFLN）光子集成平台的电光调制器（EOM）在将电信号加载到光信号上起着至关重要的作用。在本文中，我们提出了工作在850和1550 nm这两个商用波长的片上EOM，并分别成功展示了相当低的电压-长度积（ s），分别为0.78 V·cm和1.29 V·cm。此外，由于我们测试条件的限制，工作在1550 nm的EOM表现出超过40 GHz的3 dB电光（E-O）带宽能力。这项研究对于理解TFLN平台中的EOM结构以及高性能和多功能EOM器件的制造非常有帮助。