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纳米压印光刻定义的有序 P3HT 纳米结构中纳米受限诱导的链排列。

Nano-confinement induced chain alignment in ordered P3HT nanostructures defined by nanoimprint lithography.

机构信息

Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas, USA.

出版信息

ACS Nano. 2009 Oct 27;3(10):3085-90. doi: 10.1021/nn900831m.

Abstract

Control of polymer morphology and chain orientation is of great importance in organic solar cells and field effect transistors (OFETs). Here we report the use of nanoimprint lithography to fabricate large-area, high-density, and ordered nanostructures in conjugated polymer poly(3-hexylthiophene) or P3HT, and also to simultaneously control 3D chain alignment within these P3HT nanostructures. Out-of-plane and in-plane grazing incident X-ray diffraction were used to determine the chain orientation in the imprinted P3HT nanostructures, which shows a strong dependence on their geometry (gratings or pillars). Vertical chain alignment was observed in both nanogratings and nanopillars, indicating strong potential to improve charge transport and optical properties for solar cells in comparison to bulk heterojunction structure. For P3HT nanogratings, pi-pi stacking along the grating direction with an angular distribution of +/-20 degrees was found, which is favorable for OFETs. We propose the chain alignment is induced by the nanoconfinement during nanoimprinting via pi-pi interaction and hydrophobic interaction between polymer chain and mold surfaces.

摘要

控制聚合物形态和链取向对于有机太阳能电池和场效应晶体管(OFET)非常重要。在这里,我们报告了使用纳米压印光刻技术在共轭聚合物聚(3-己基噻吩)或 P3HT 中制造大面积、高密度和有序的纳米结构,并且还可以同时控制这些 P3HT 纳米结构内的 3D 链排列。面外和平面掠入射 X 射线衍射用于确定压印 P3HT 纳米结构中的链取向,其强烈依赖于它们的几何形状(光栅或支柱)。在纳米光栅和纳米支柱中都观察到垂直链排列,这表明与体异质结结构相比,在提高太阳能电池的电荷输运和光学性能方面具有很大的潜力。对于 P3HT 纳米光栅,发现沿光栅方向的 pi-pi 堆积具有 +/-20 度的角分布,这有利于 OFET。我们提出,链取向是通过纳米压印过程中的纳米限制通过 pi-pi 相互作用和聚合物链与模具表面之间的疏水相互作用诱导的。

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