Cybart Shane A, Anton Steven M, Wu Stephen M, Clarke John, Dynes Robert C
Department of Physics, University of California, Berkeley, California 94720, USA.
Nano Lett. 2009 Oct;9(10):3581-5. doi: 10.1021/nl901785j.
Very large scale integration of Josephson junctions in a two-dimensional series-parallel array has been achieved by ion irradiating a YBa(2)Cu(3)O(7-delta) film through slits in a nanofabricated mask created with electron beam lithography and reactive ion etching. The mask consisted of 15820 high aspect ratio (20:1), 35 nm wide slits that restricted the irradiation in the film below to form Josephson junctions. Characterizing each parallel segment k, containing 28 junctions, with a single critical current I(ck) we found a standard deviation in I(ck) of about 16%.
通过离子束照射穿过电子束光刻和反应离子蚀刻制成的纳米制造掩膜中的狭缝的YBa₂Cu₃O₇₋ₓ薄膜,已实现了约瑟夫森结在二维串并联阵列中的超大规模集成。该掩膜由15820个高纵横比(20:1)、宽35nm的狭缝组成,这些狭缝限制了对下方薄膜的照射,从而形成约瑟夫森结。用单个临界电流I(ck)对包含28个结的每个并联段k进行表征时,我们发现I(ck)的标准偏差约为16%。