Lemme Max C, Bell David C, Williams James R, Stern Lewis A, Baugher Britton W H, Jarillo-Herrero Pablo, Marcus Charles M
Department of Physics, Harvard University, Cambridge, MA 02138, USA.
ACS Nano. 2009 Sep 22;3(9):2674-6. doi: 10.1021/nn900744z.
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
我们报道了用氦离子束蚀刻石墨烯器件的情况，包括光刻过程中的原位电学测量。蚀刻工艺可用于对石墨烯器件中的不同区域进行纳米结构化和电隔离，例如通过在悬浮的石墨烯器件中蚀刻出间隙低至约10纳米的通道来证明。二氧化硅（SiO₂）衬底上的石墨烯器件在较低的氦离子剂量下进行蚀刻，并且发现蚀刻后具有残余电导率，我们将其归因于碳氢化合物污染。
