Fölsch Stefan, Yang Jianshu, Nacci Christophe, Kanisawa Kiyoshi
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
Phys Rev Lett. 2009 Aug 28;103(9):096104. doi: 10.1103/PhysRevLett.103.096104. Epub 2009 Aug 27.
The vertical manipulation of native adatoms on a III-V semiconductor surface was achieved in a scanning tunneling microscope at 5 K. Reversible repositioning of individual In atoms on InAs(111)A allows us to construct one-atom-wide In chains. Tunneling spectroscopy reveals that these chains host quantum states deriving from an adatom-induced electronic state and substantial substrate-mediated coupling. Our results show that the combined approach of atom manipulation and local spectroscopy is capable to explore atomic-scale quantum structures on semiconductor platform.
在5K的扫描隧道显微镜中实现了对III-V族半导体表面上原生吸附原子的垂直操纵。在InAs(111)A上对单个In原子进行可逆重新定位，使我们能够构建单原子宽的In链。隧穿光谱表明，这些链具有源自吸附原子诱导电子态和大量衬底介导耦合的量子态。我们的结果表明，原子操纵和局域光谱相结合的方法能够探索半导体平台上的原子尺度量子结构。
