Macfarlane R M
Opt Lett. 1993 May 15;18(10):829-31. doi: 10.1364/ol.18.000829.
Spectral hole burning is reported for the trivalent thulium ion with measurements on the (3)H(6)(1) ? (3)H(4)(1) transition of LaF(3):Tm(3+) and two sites (A and B) of CaF(2):Tm(3+) at 1.5 K. Hole burning occurs by population storage in the metastable (3)F(4) level. The holes were scanned by an electric-field ramp applied directly to the sample, the frequency being calibrated by burning multiple holes with a frequency-modulated laser. This yielded the hole widths as well as the Stark coefficients for the transition studied, which are 8.3 kHz/V cm(-1) parallel to the C(2) axis (LaF(3):Tm(3+)) and for CaF(2):Tm(3+) are 25 kHz/V cm(-1) (site A), and 4.6 kHz/V cm(-1) (site B) for fields along the (001) direction. From the polarization behavior of the holes, the sites in CaF(2) are assigned to the F(-)-compensated C(4nu) and C(3nu) sites, respectively.
据报道，在1.5 K温度下，对LaF₃:Tm³⁺的(³H₆¹)→(³H₄¹)跃迁以及CaF₂:Tm³⁺的两个位点（A和B）进行测量时，观察到了三价铥离子的光谱烧孔现象。烧孔是通过亚稳态(³F₄)能级的粒子数存储实现的。通过直接施加到样品上的电场斜坡扫描烧孔，频率通过用调频激光烧多个孔进行校准。这得到了所研究跃迁的烧孔宽度以及斯塔克系数，对于平行于C₂轴的LaF₃:Tm³⁺，其为8.3 kHz/V cm⁻¹，对于CaF₂:Tm³⁺，沿(001)方向的场，位点A为25 kHz/V cm⁻¹，位点B为4.6 kHz/V cm⁻¹。根据烧孔的偏振行为，CaF₂中的位点分别被确定为F⁻补偿的C₄ν和C₃ν位点。
