Jung I D, Kärtner F X, Brovelli L R, Kamp M, Keller U
Opt Lett. 1995 Sep 15;20(18):1892-4. doi: 10.1364/ol.20.001892.
We demonstrate experimentally that solid-state lasers with strong solitonlike pulse shaping can be mode locked by a slow saturable absorber only, i.e., the response time is much slower than the width of the soliton. A Ti:sapphire laser mode locked by a low-temperature-grown GaAs absorber with 10-ps recovery time generates pulses as short as 300 fs without the need for Kerr-lens mode locking and critical cavity alignment. An extrapolation of this result would predict that an asymptotically equal to 100-fs recovery time of a semiconductor absorber could support pulses into the 10-fs regime.
我们通过实验证明,具有强类孤子脉冲整形的固态激光器仅可由慢饱和吸收体锁模,即响应时间比孤子宽度慢得多。一台由恢复时间为10皮秒的低温生长砷化镓吸收体锁模的钛宝石激光器,无需克尔透镜锁模和临界腔对准就能产生短至300飞秒的脉冲。该结果的推断表明,半导体吸收体渐近等于100飞秒的恢复时间能够支持产生进入10飞秒范围的脉冲。