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由碳粉和硅粉合成3C-SiC纳米结构及其生长机制。

Syntheses and growth mechanisms of 3C-SiC nanostructures from carbon and silicon powders.

作者信息

Zhu J, Xiong X, Chen H T, Wu X L, Zhang W C, Chu Paul K

机构信息

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.

出版信息

J Nanosci Nanotechnol. 2009 Nov;9(11):6648-54. doi: 10.1166/jnn.2009.1323.

Abstract

Cubic silicon carbide (3C-SiC) nanostructures such as needle- and Y-shaped nanowhiskers, smooth and pagoda-shaped nanorods are synthesized on a large scale from activated carbon and silicon powders at 1250 degrees C under atmospheric pressure. The use of ball-milled silicon powders results in the formation of nanowires and nanowhiskers, whereas non-milled silicon powders lead to nanorods together with unreacted silicon powders. Residual oxygen in the growth chamber initiates the carburization reactions which can proceed without further oxygen consumption. The size and morphology of the as-synthesized 3C-SiC nanostructures are observed to be related to the size and morphology of the starting silicon particles. An oxygen-assisted gas-solid model is proposed to explain the observed nanostructures.

摘要

在大气压力下,于1250摄氏度,由活性炭和硅粉大规模合成了立方碳化硅(3C-SiC)纳米结构,如针状和Y形纳米晶须、光滑的宝塔形纳米棒。使用球磨硅粉会形成纳米线和纳米晶须,而非球磨硅粉则会产生纳米棒以及未反应的硅粉。生长室中的残余氧引发渗碳反应,该反应可在无需进一步消耗氧气的情况下进行。观察到所合成的3C-SiC纳米结构的尺寸和形态与起始硅颗粒的尺寸和形态有关。提出了一种氧辅助气固模型来解释所观察到的纳米结构。

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