Seong Han-Kyu, Kim Ungkil, Kim Myoung-Ha, Lee Hyun-Hwi, Lee Dong-Ryeol, Kim Jae-Young, Choi Heon-Jin
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
J Nanosci Nanotechnol. 2009 Nov;9(11):6772-6. doi: 10.1166/jnn.2009.1368.
We report on structural chemical state of doped Mn atoms in single crylstalline Mn doped GaN nanowires by X-ray absorption spectroscopy. Anomalous X-ray scattering and K-edge X-ray absorption fine structure measurement make it clear that Mn atoms substitute the Ga sites and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Mn L(2,3)-edges show that doped Mn has local magnetic moment and the electronic configuration of the doped Mn is mainly 3d(5) component. The structural and chemical states of the doped Mn atoms imply that they ascribe to the observed ferromagnetism in these diluted magnetic semiconductor nanowires.
我们通过X射线吸收光谱法报道了单晶掺锰氮化镓纳米线中掺杂锰原子的结构化学状态。反常X射线散射和K边X射线吸收精细结构测量表明，锰原子取代了镓位点，并且它们在很大程度上参与了主体氮化镓的纤锌矿网络。锰L(2,3)边的X射线吸收和X射线磁圆二色光谱表明，掺杂的锰具有局域磁矩，且掺杂锰的电子构型主要为3d(5)成分。掺杂锰原子的结构和化学状态表明，它们是这些稀磁半导体纳米线中观察到的铁磁性的原因。
