使用基于多面体低聚倍半硅氧烷的可光图案化绝缘材料的有机薄膜晶体管。

Organic thin film transistors using a polyhedral oligomeric silsesquioxane-based photo-patternable insulating material.

作者信息

Cho Hyun-Duck, Jung Chung-Hwa, Park Moo-Jin, Shim Hong-Ku, Hwang Do-Hoon, Lee Changhee

机构信息

School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.

出版信息

J Nanosci Nanotechnol. 2009 Dec;9(12):6923-7. doi: 10.1166/jnn.2009.1648.

DOI:10.1166/jnn.2009.1648

PMID:19908699

Abstract

We synthesized a new photo-patternable organic/inorganic hybrid material, polyhedral oligomeric silsesquioxane (POSS) derivative containing cyclohexene-1,2-epoxide functional groups (POSS-EPOXY), and fabricated an organic thin film transistor (OTFT) using pentacene as an active p-type organic semiconductor and POSS-EPOXY as a gate dielectric layer to demonstrate its applicability for organic electronics. The pentacene transistor with the POSS-EPOXY layer shows comparable transistor characteristics as that with the prototypical polymeric gate insulator of poly(vinylphenol) (PVP). They exhibit field-effect mobility of micro(FET) approximately 0.075 cm2/Vs, threshold voltage of V(T) = -22.2 V, the on/off current ratio of 7 x 10(5), and the subthreshold slope of 3.9 V/dec.

摘要

我们合成了一种新型的可光图案化有机/无机杂化材料，即含有环己烯-1,2-环氧官能团的多面体低聚倍半硅氧烷（POSS）衍生物（POSS-EPOXY），并以并五苯作为有源p型有机半导体、POSS-EPOXY作为栅极介电层制备了有机薄膜晶体管（OTFT），以证明其在有机电子学中的适用性。具有POSS-EPOXY层的并五苯晶体管展现出与具有聚（乙烯基苯酚）（PVP）典型聚合物栅极绝缘体的晶体管相当的特性。它们表现出约0.075 cm2/Vs的场效应迁移率（μFET）、-22.2 V的阈值电压（VT）、7×105的开/关电流比以及3.9 V/dec的亚阈值斜率。