Cho Hyun-Duck, Jung Chung-Hwa, Park Moo-Jin, Shim Hong-Ku, Hwang Do-Hoon, Lee Changhee
School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
J Nanosci Nanotechnol. 2009 Dec;9(12):6923-7. doi: 10.1166/jnn.2009.1648.
We synthesized a new photo-patternable organic/inorganic hybrid material, polyhedral oligomeric silsesquioxane (POSS) derivative containing cyclohexene-1,2-epoxide functional groups (POSS-EPOXY), and fabricated an organic thin film transistor (OTFT) using pentacene as an active p-type organic semiconductor and POSS-EPOXY as a gate dielectric layer to demonstrate its applicability for organic electronics. The pentacene transistor with the POSS-EPOXY layer shows comparable transistor characteristics as that with the prototypical polymeric gate insulator of poly(vinylphenol) (PVP). They exhibit field-effect mobility of micro(FET) approximately 0.075 cm2/Vs, threshold voltage of V(T) = -22.2 V, the on/off current ratio of 7 x 10(5), and the subthreshold slope of 3.9 V/dec.
我们合成了一种新型的可光图案化有机/无机杂化材料，即含有环己烯-1,2-环氧官能团的多面体低聚倍半硅氧烷（POSS）衍生物（POSS-EPOXY），并以并五苯作为有源p型有机半导体、POSS-EPOXY作为栅极介电层制备了有机薄膜晶体管（OTFT），以证明其在有机电子学中的适用性。具有POSS-EPOXY层的并五苯晶体管展现出与具有聚（乙烯基苯酚）（PVP）典型聚合物栅极绝缘体的晶体管相当的特性。它们表现出约0.075 cm2/Vs的场效应迁移率（μFET）、-22.2 V的阈值电压（VT）、7×105的开/关电流比以及3.9 V/dec的亚阈值斜率。
