Hv1 质子通道的结构与门控。
Architecture and gating of Hv1 proton channels.
机构信息
Department of Physiology and Biophysics, University of California, Irvine, CA 92697, USA.
出版信息
J Physiol. 2009 Nov 15;587(Pt 22):5325-9. doi: 10.1113/jphysiol.2009.180265.
Abstract
Voltage-gated proton channels have been described in different cells and organisms since the early '80s, but the first member of the family, Hv1, was cloned only recently. The Hv1 channel was found to contain a voltage-sensing domain (VSD), similar to those of voltage-gated sodium, potassium and calcium channels. All these other channels also contain a pore domain, which forms a central pore at the interface of the four subunits. The pore domain is missing in Hv1. This raised several questions on the location of the proton pore and on the mechanism of gating. Here, we briefly review our effort to understand the structural organization of Hv1 channels and discuss the relationship between the gating of Hv1 and the gating of ion-conducting pores recently discovered in the VSDs of mutant voltage-gated potassium and sodium channels.
摘要
自 80 年代初以来，不同的细胞和生物体中已经描述了电压门控质子通道，但该家族的第一个成员 Hv1 直到最近才被克隆。发现 Hv1 通道包含一个电压感应结构域（VSD），类似于电压门控钠、钾和钙通道。所有这些其他通道还包含一个孔结构域，该结构域在四个亚基的界面处形成一个中央孔。Hv1 中缺少孔结构域。这引发了关于质子孔位置和门控机制的几个问题。在这里，我们简要回顾了我们理解 Hv1 通道结构组织的努力，并讨论了最近在突变电压门控钾和钠通道 VSD 中发现的离子导电孔的门控与 Hv1 门控之间的关系。
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