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用于非易失性存储器应用的磁控溅射nc-Al/α-Al₂O₃纳米复合薄膜

Magnetron sputtered nc-Al/alpha-Al2O3 nanocomposite thin films for nonvolatile memory application.

作者信息

Li Yibin, Zhang Sam, Liu Y, Chen T P, Sritharan Thirumany, Xu Cong

机构信息

School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

出版信息

J Nanosci Nanotechnol. 2009 Jul;9(7):4116-20. doi: 10.1166/jnn.2009.m19.

DOI:10.1166/jnn.2009.m19
PMID:19916417
Abstract

In this paper, we developed nc-Al/a-Al2O3 nanocomposite thin films using magnetron sputtering. The nc-Al/a-Al2O3 films were sputtered on p-type Si substrates from pure Al target in gas mixture of Ar and O2. X-ray photoelectron spectroscopy and high resolution transmission electron microscope studies confirm that the nanocrystalline Al are embedded in amorphous Al2O3 matrix thus nc-Al/ a-Al2O3 nanocomposite forms. This nanocomposite thin film exhibits memory effect as a result of charge trapping.

摘要

在本文中,我们利用磁控溅射法制备了nc-Al/a-Al₂O₃纳米复合薄膜。在氩气和氧气的混合气体中,从纯铝靶材在p型硅衬底上溅射制备了nc-Al/a-Al₂O₃薄膜。X射线光电子能谱和高分辨率透射电子显微镜研究证实,纳米晶铝嵌入非晶Al₂O₃基体中,从而形成了nc-Al/a-Al₂O₃纳米复合材料。由于电荷俘获,这种纳米复合薄膜表现出记忆效应。

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