Chandrashekaraiah Thejaswini Halethimmanahally, Bogdanowicz Robert, Rühl Eckart, Danilov Vladimir, Meichsner Jürgen, Thierbach Steffen, Hippler Rainer
Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, Felix-Hausdorff-Str. 6, Greifswald 17489, Germany.
Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., Gdansk 80-233, Poland.
Materials (Basel). 2016 Jul 19;9(7):594. doi: 10.3390/ma9070594.
Plasma polymerized a-C:H thin films have been deposited on Si (100) and aluminum coated glass substrates by a dielectric barrier discharge (DBD) operated at medium pressure using C₂H/Ar ( = 2, 4, 6) gas mixtures. The deposited films were characterized by Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS), Raman spectroscopy, and ellipsometry. FT-IRRAS revealed the presence of ³ and ² C-H stretching and C-H bending vibrations of bonds in the films. The presence of D and G bands was confirmed by Raman spectroscopy. Thin films obtained from C₂H₄/Ar and C₂H₆/Ar gas mixtures have I/I ratios of 0.45 and 0.3, respectively. The refractive indices were 2.8 and 3.1 for C₂H₄/Ar and C₂H₆/Ar films, respectively, at a photon energy of 2 eV.
通过在中压下使用C₂H/Ar(= 2、4、6)气体混合物的介质阻挡放电(DBD),在Si(100)和涂铝玻璃基板上沉积了等离子体聚合的a-C:H薄膜。通过傅里叶变换红外反射吸收光谱(FT-IRRAS)、拉曼光谱和椭偏仪对沉积的薄膜进行了表征。FT-IRRAS揭示了薄膜中键的³和² C-H伸缩振动以及C-H弯曲振动的存在。拉曼光谱证实了D带和G带的存在。从C₂H₄/Ar和C₂H₆/Ar气体混合物中获得的薄膜的I/I比分别为0.45和0.3。在光子能量为2 eV时,C₂H₄/Ar和C₂H₆/Ar薄膜的折射率分别为2.8和3.1。