Navas I, Vinodkumar R, Lethy K J, Satyanarayana M, Ganesan V, Pillai V P Mahadevan
Department of Optoelectronics, University of Kerala, Kariavattom, Trivandrum 695581, Kerala, India.
J Nanosci Nanotechnol. 2009 Sep;9(9):5254-61. doi: 10.1166/jnn.2009.1163.
Undoped and zinc oxide (ZnO) doped molybdenum oxide (MoO3) films were prepared by RF magnetron sputtering technique. The influence of doping and post annealing temperature on the structural and optical properties of these films were investigated systematically using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS spectroscopy and photoluminescence spectroscopy (PL). The XRD patterns indicate the presence of stoichiometric orthorhombic alpha-MoO3 phase in the annealed (573 and 673 K) undoped molybdenum oxide films and in ZnO doped molybdenum oxide film (annealed at 673 K). The crystalline grain size in the films was investigated using Debye Scherrer formula and corrected using Hall-Williamson equation. The SEM and AFM images revealed the distribution of nano leafs, nanorods and nanograins. Nanorods of length 1.4 microm and diameter 149 nm can be observed in ZnO doped films. The optical band gap energy was found to increase with increase in annealing temperature and particle size. These nanostructures show a room temperature PL emission in the UV and visible region.
采用射频磁控溅射技术制备了未掺杂和氧化锌（ZnO）掺杂的氧化钼（MoO₃）薄膜。利用X射线衍射（XRD）、能量色散X射线分析（EDAX）、扫描电子显微镜（SEM）、原子力显微镜（AFM）、紫外-可见光谱和光致发光光谱（PL）系统研究了掺杂和退火温度对这些薄膜结构和光学性能的影响。XRD图谱表明，在退火（573和673K）的未掺杂氧化钼薄膜以及ZnO掺杂的氧化钼薄膜（在673K退火）中存在化学计量比的正交α-MoO₃相。使用德拜-谢乐公式研究薄膜中的晶粒尺寸，并使用霍尔-威廉姆森方程进行校正。SEM和AFM图像揭示了纳米叶片、纳米棒和纳米颗粒的分布。在ZnO掺杂薄膜中可以观察到长度为1.4微米、直径为149纳米的纳米棒。发现光学带隙能量随退火温度和粒径的增加而增加。这些纳米结构在紫外和可见光区域表现出室温PL发射。
