Islam M A, Rahman K S, Haque F, Khan N A, Akhtaruzzaman M, Alam M M, Ruslan H, Sopian K, Amin N
J Nanosci Nanotechnol. 2015 Nov;15(11):9184-91. doi: 10.1166/jnn.2015.11416.
In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 20 values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V(-1) s(-1).
在本研究中，通过在玻璃衬底上共溅射氧化锌（ZnO）和锡，成功制备了锡掺杂氧化锌（ZnO:Sn）纳米结构薄膜。借助X射线衍射（XRD）、能谱分析（EDX）、扫描电子显微镜（SEM）、原子力显微镜（AFM）、霍尔效应测量以及紫外可见光谱法，广泛研究了锡掺杂对薄膜微观结构、相、形貌、光学和电学性能的影响。结果表明，未掺杂的ZnO薄膜沿六方纤锌矿结构的c轴呈现择优取向。随着锡掺杂量的增加，（002）面的峰值位置向更高的2θ值偏移，最终转变为非晶结构。吸收边向蓝光区域移动，这证实了薄膜中的激子量子限制效应。因此，在真空退火后的掺杂薄膜中，观察到表面形貌得到改善，光学带隙增大，平均粒径减小，电阻率降低，霍尔迁移率和载流子浓度提高。在本研究中所研究的所有沉积态和退火态ZnO:Sn薄膜中，掺杂8原子百分比锡浓度的退火薄膜表现出最佳性能，带隙为3.84电子伏特，均方根粗糙度为2.51纳米，电阻率为2.36欧姆厘米，霍尔迁移率为83平方厘米每伏每秒。
