Saravanan K, Panigrahi B K, Amirthapandian S, Kalavathi S, Srivastava A K, Nair K G M
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India.
J Nanosci Nanotechnol. 2009 Sep;9(9):5523-6. doi: 10.1166/jnn.2009.1128.
Silicon carbide nanoparticles were synthesized in Si(100) wafers by 300 keV C+ ion implantation at elevated substrate temperatures of 550, 650 and 700 degrees C. The implantation has been carried out upto a fluence of 2 x 10(17) ions/cm2 with a constant current density 1.2 microA/cm2. GIXRD analysis on the implanted sample confirms the formation of 3C-SiC. XTEM studies of sample implanted at 650 degrees C show that size of SiC nanoparticles is 6 nm at a depth 0.6 microm from the sample surface. PL spectrum of sample implanted at different temperatures showed a peak at 2.45 eV and 2.3 eV and the intensity of PL peak increases with implantation temperature. The peak at 2.45 eV corresponds to blue shifted emission from SiC nanoparticles having size 6 nm. The peak at 2.3 eV is assigned to the SiC nanoparticles with enhanced d-value.
通过在550、650和700摄氏度的升高衬底温度下进行300 keV C+离子注入，在Si(100)晶圆中合成了碳化硅纳米颗粒。注入已进行到通量为2×10(17)离子/cm2，恒定电流密度为1.2 μA/cm2。对注入样品的掠入射X射线衍射（GIXRD）分析证实了3C-SiC的形成。对在650摄氏度下注入的样品进行的高分辨透射电子显微镜（XTEM）研究表明，在距样品表面0.6微米的深度处，SiC纳米颗粒的尺寸为6纳米。在不同温度下注入的样品的光致发光（PL）光谱在2.45 eV和2.3 eV处出现一个峰，并且PL峰的强度随着注入温度的升高而增加。2.45 eV处的峰对应于尺寸为6纳米的SiC纳米颗粒的蓝移发射。2.3 eV处的峰归因于具有增强d值的SiC纳米颗粒。
