You Guoqiang, Lin Haipeng, Qu Yanfeng, Hao Jie, You Suyuan, Li Bingsheng
China Institute for Radiation Protection, Taiyuan 030006, China.
School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China.
Materials (Basel). 2022 Apr 18;15(8):2941. doi: 10.3390/ma15082941.
Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation is a good method. He and H co-implantation into Si can efficiently enhance exfoliation efficiency compared to only H implantation. In this study, 6H-SiC single crystals were implanted with He and H dual beams at room temperature, followed by annealing at 1100 °C for 15 min, and irradiations with 60 keV He ions with a fluence of 1.5 × 10 ions/cm or 5.0 × 10 ions/cm and 100 keV H ions with a fluence of 5 × 10 ions/cm were carried out. The lattice disorder was characterized by both Raman spectroscopy and transmission electron microscopy. The intensity of Raman peaks decreased with increasing fluence. No Raman shift or new phases were found. A very high numerical density of bubbles was observed as compared to single H or He implantation. Moreover, stacking faults, Frank loops and tangled dislocations were formed in the damaged layer. Surface exfoliation was inhibited by co-implantation. A possible reason for this is an increase in fracture toughness and a decrease in elastic out-of-plane strain due to dense bubbles and stacking faults.
碳化硅（SiC）是先进半导体行业中一种很有前景的材料。通过氢离子注入制造绝缘体上碳化硅是一种很好的方法。与仅进行氢离子注入相比，氦离子和氢离子共注入硅中可以有效地提高剥离效率。在本研究中，在室温下用氦离子和氢离子双束对6H-SiC单晶进行注入，然后在1100℃下退火15分钟，并分别用通量为1.5×10离子/cm或5.0×10离子/cm的60keV氦离子以及通量为5×10离子/cm的100keV氢离子进行辐照。通过拉曼光谱和透射电子显微镜对晶格无序进行表征。拉曼峰的强度随通量增加而降低。未发现拉曼位移或新相。与单一氢离子或氦离子注入相比，观察到气泡的数值密度非常高。此外，在损伤层中形成了堆垛层错、弗兰克环和缠结位错。共注入抑制了表面剥离。一个可能的原因是由于密集的气泡和堆垛层错导致断裂韧性增加以及弹性面外应变减小。
