IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
ACS Nano. 2009 Nov 24;3(11):3744-8. doi: 10.1021/nn900962f.
The photoluminescence of a partially suspended, semiconducting carbon nanotube that forms the active channel of a field-effect transistor is quenched and red-shifted upon application of a longitudinal electrical (source-drain) field. The quenching can be explained by a loss of oscillator strength and an increased Auger-like nonradiative decay of the E(11) exciton. The spectral shifts are due to drain-field-induced doping that leads to enhanced dielectric screening. Electroluminescence due to electron impact excitation of E(11) excitons is red-shifted and broadened with respect to the zero-field photoluminescence. A combination of screening and heating of the carbon nanotube can explain both spectral shift and broadening of the electrically induced light emission.
部分悬浮的半导体碳纳米管作为场效应晶体管的有源通道，其光致发光会在施加纵向电场（源漏）时猝灭并红移。猝灭可以通过振子强度的损失和 E(11)激子的增加的类俄歇非辐射衰减来解释。光谱位移是由于漏极场诱导掺杂导致增强的介电屏蔽引起的。与零场光致发光相比，电子冲击激发 E(11)激子的电致发光发生红移和展宽。屏蔽和碳纳米管的加热的组合可以解释电致发光的光谱位移和展宽。
