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纳米界面本征局域电荷和内电场的非接触式电学探测。

Non-contact electrical detection of intrinsic local charge and internal electric field at nanointerfaces.

机构信息

Centre of Computational Physics, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra, Portugal.

出版信息

Nanotechnology. 2010 Jan 8;21(1):015707. doi: 10.1088/0957-4484/21/1/015707. Epub 2009 Nov 30.

Abstract

A nanoscale non-contact electrical measurement has been developed based on Auger electron spectroscopy. This approach used the specialty of an Auger electron, which is self-generated and free from external influences, to overcome the technical limitations of conventional measurements. The detection of the intrinsic local charge and internal electric field for nanostructured materials was achieved with a resolution below 10 nm. As an example, the electrical properties at the GaN/AlGaN/GaN nanointerfaces were characterized. The concentration of the intrinsic polarization sheet charges embedded in GaN/AlGaN nanointerfacial layers were accurately detected to be -4.4 e nm(-2). The mapping of the internal electric field across the nanointerface revealed the actual energy-band configuration at the early stage of the formation of a two-dimensional electron gas.

摘要

已经开发出一种基于俄歇电子能谱的纳米级非接触电测量方法。该方法利用俄歇电子的自生性和不受外部影响的特性,克服了传统测量的技术限制。对于纳米结构材料,可以实现低于 10nm 的分辨率来检测本征局部电荷和内部电场。作为一个例子,对 GaN/AlGaN/GaN 纳米界面的电学性质进行了表征。准确地检测到嵌入 GaN/AlGaN 纳米界面层中的本征极化层电荷的浓度为-4.4e nm(-2)。通过对纳米界面的内部电场进行映射,揭示了二维电子气形成初期的实际能带结构。

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