二维硫属玻璃光子晶体中的光写入高 Q 空腔。

Photowritten high-Q cavities in two-dimensional chalcogenide glass photonic crystals.

机构信息

Centre for Ultrahigh-bandwidth Devices for Optical Systems (CUDOS), IPOS, School of Physics,University of Sydney, Sydney, NSW 2006, Australia.

出版信息

Opt Lett. 2009 Dec 1;34(23):3671-3. doi: 10.1364/OL.34.003671.

DOI:10.1364/OL.34.003671

PMID:19953157

Abstract

We demonstrate a high-Q(approximately 125,000) photonic crystal (PhC) cavity formed using a postprocessing optical exposure technique where the refractive index of a photosensitive chalcogenide PhC is modified locally. The evolution of the cavity resonances was monitored in situ during writing using a tapered fiber evanescent coupling system, and the Q of 125,000 represents 1 order of magnitude increase over previously reported cavities in two-dimensional chalcogenide glass PhC.

摘要

我们展示了一种使用后处理光学曝光技术形成的高 Q（约 125,000）光子晶体（PhC）腔，其中光敏硫属化物 PhC 的折射率被局部修改。使用锥形光纤消逝耦合系统在写入过程中实时监测腔共振的演变，125,000 的 Q 值表示与以前在二维硫属化物玻璃 PhC 中报道的腔相比增加了一个数量级。