State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing, People's Republic of China.
Nanotechnology. 2010 Jan 15;21(2):025301. doi: 10.1088/0957-4484/21/2/025301. Epub 2009 Dec 3.
An enhancement of the electroluminescence (EL) from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide (AAO) pattern was demonstrated. The nanoporous AAO pattern with a pore density of 1.4 x 10(10) cm(-2) and a pore diameter of 50 +/- 10 nm was fabricated by the two-step anodic oxidation method on a n-type silicon wafer. The nanoscale AAO patterned Si p(+)-n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Si p(+)-n junctions. The enhancement may originate from a reduction of nonradiative recombination due to partial passivation of the Si surface by the AAO pattern and improvement of the light extraction due to surface nanotextures.
采用阳极氧化铝（AAO）图案制作的纳米尺度硅 p(+)-n 结的电致发光（EL）得到了增强。通过两步阳极氧化法在 n 型硅片上制备出具有 1.4 x 10(10) cm(-2) 孔密度和 50 +/- 10 nm 孔径的纳米多孔 AAO 图案。与未图案化的 Si p(+)-n 结相比，纳米级 AAO 图案化 Si p(+)-n 结的 EL 增强因子高达约 5。增强可能源于 AAO 图案对 Si 表面的部分钝化导致非辐射复合减少，以及表面纳米结构导致的光提取改善。
